SRF20100LCT low v schottky barrier rectifier f reverse voltage - 100 volts forward current - 20amperes r semiconductor features mechanical data maximum ratings and electrical characteristics notes : 1.pulse test: 300 s pulse width,1% duty cycle (ratings at 25 c ambient temperature unless otherwise specified ,single phase ,half wave ,resistive or inductive load. for capacitive load,derate by 20%.) plastic package has underwriters laboratory flammability classification 94v-0 metal silicon junction ,majority carrier conduction guard ring for overvoltage protection low power loss ,high efficiency high current capability ,low forward voltage drop high surge capability for use in low voltage ,high frequency inverters, free wheeling ,and polarity protection applications dual rectifier construction high temperature soldering guaranteed:260 c/10 seconds,, 0.25"(6.35mm)from case component in accordance to rohs 2002 95 ec and weee 2002 96 ec / // / case terminals polarity weight : : : : jedec ito-220ab molded plastic body lead solderable per mil-std-750,method 2026 as marked any 0.08ounce, 2.24 grams mounting position : maximum repetitive peak reverse voltage v rrm v olts v olts v olts a mps a mps v rms v dc i (av) i fsm t stg r jc maximum rms voltage maximum dc blocking voltage typical thermal resistance per diode operating junction and storage temperature range peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) -65 to+150 2.8 /w t j, 100 70 10.0 20.0 150 symbols units sr 100lct f 20 100 jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 2-1 maximum average forward (see fig.1) rectified current per leg total device test conditions symbols max. typ. units reverse current per diode instantaneous forward voltage per diode parameter v olts a ma a ma voltage rate of change dv/dt 10000 v/ s i r (note 2) t a =25 i =5a f v =70v r v f (note 1) i =10a f i =5a f i =10a f v =100v r t a =125 t a =25 t a =125 t a =25 t a =125 2 .pulse test: pulse width 40ms 0.55 0.77 0.50 0.58 5.3 17 - 12 - 0.68 500 25 - 0.79 - - ito-220ab dimensions in inches and (millimeters) 0.666(16.92) 1.130(28.7) 0.167(4.25) 0.101(2.57) 0.029(0.73) 0.111(2.83) 0.1 5(3.55) 4 0.610(15.5) 0.136(3.45) 0.190(4.75) 0.174(4.42) 0.325(8.25) 0.520(13.2) 0.029(0.73) 0.633(16.08) 1.083(27.5) 0.148(3.75) 0.096(2.44) 0.019(0.47) 0.101(2.57) dia 0.128(3.25) dia 0.570(14.9) 0.116(2.95) 0.165(4.25) 0.165(4.18) 0.321(8.15) 0.496(12.6) 0.019(0.47) pin 0.388(9.85) 123 0.130(3.31) 0.110(2.81) 0.130(3.31) 0.407(10.35) 0.056(1.43) 0.046(1.17) jf SRF20100LCT
ratings and characteristic curves SRF20100LCT jinan jingheng electronics co., ltd. http www.jinghenggroup.com :// 2-2 fig. 1 - maximum forward current derating curve fig. 4 - typical reverse characteristics per diode case temperature (c) average forward current (a) 24 20 16 12 8 4 0 0 25 50 75 100 125 150 175 resistive or inductive load 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous forward voltage (v) t a = 150 c t a = 125 c t a = 25 c instantaneous reverse current (ma) 0 2 4 6 8 10 12 14 16 18 20 0 4 8 12162024 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 d = 1.0 average forward current (a) average power loss (w) d = t p /t t p t 10 100 1000 10 000 0.1 1 10 100 reverse voltage (v) junction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 mv p-p fig. 2 - forward power loss characteristics per diode fig. 5 - typical juncti on capacitance per diode fig. 3 - typical instantaneous forward characteristics per diode fig. 6 - typical transient thermal impedance per diode 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t a = 150 c t a = 125 c t a = 25 c instantaneous forward voltage (v) instantaneous forward current (a) 1 10 0.01 0.1 1 10 100 t - pulse duration (s) transient thermal impedance (c/w) junction to case
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